Equipment

Atomic Layer Deposition (ALD)

Atomic Layer Deposition

Model:

Cambridge Savannah 200 ALD

Capabilities:

  • Support up to 8" circular substrates.
  • Uniform coating (not line-of-sight or directional).
  • Most processes use T < 200C.
  • Available materials include: Al2O3, SiO2, HfO2 and Pt.
  • Film thickness control to monolayer resolution.

Cost:

For UR users

For nonUR users

Calendar for Reservations:

PPMS Scheduler

This tool represents a specific application of Chemical Vapor Deposition (CVD) to uniformly deposit films one monolayer at a time. The reaction of precursors is self limiting. This results in extreme precision as the total deposition thickness is determined not by time, but by the total number of cycles. Chemically, ALD reactions are very similar to more common CVD methods such as Plasma Enhanced CVD (PECVD). However, ALD breaks the process into two half-reactions. This keeps the precursors separate, allowing reactions to take place only on a surface level, limiting the process to one molecular layer per cycle. Deposition rates for this tool are typically on the order of ~1A/s.